8

Fabrication and characterization of GaN FETs

Year:
1997
Language:
english
File:
PDF, 470 KB
english, 1997
14

AlGaN/GaN HEMTs grown on SiC substrates

Year:
1997
Language:
english
File:
PDF, 281 KB
english, 1997
18

Electrical characterization of Schottky contacts to N-polar GaN

Year:
2013
Language:
english
File:
PDF, 663 KB
english, 2013
19

Year:
2005
Language:
english
File:
PDF, 993 KB
english, 2005
28

On some improvements in the estimation of tannins

Year:
1884
Language:
english
File:
PDF, 271 KB
english, 1884
29

Damaged-induced isolation in n-type InP by light-ion implantation

Year:
1983
Language:
english
File:
PDF, 408 KB
english, 1983
30

Device isolation by oxygen implantation in n-type indium phosphide

Year:
1984
Language:
english
File:
PDF, 210 KB
english, 1984
31

α-SiC buried-gate junction field effect transistors

Year:
1992
Language:
english
File:
PDF, 286 KB
english, 1992
36

GaN FETs for microwave and high-temperature applications

Year:
1997
Language:
english
File:
PDF, 257 KB
english, 1997
38

Fully-coupled electromechanical analysis of stress-related failure in GaN HEMTs

Year:
2011
Language:
english
File:
PDF, 383 KB
english, 2011
46

Trapping effects in GaN and SiC microwave FETs

Year:
2002
Language:
english
File:
PDF, 300 KB
english, 2002
50

High-transconductance β-SiC buried-gate JFETs

Year:
1989
Language:
english
File:
PDF, 448 KB
english, 1989